2SB1116 datasheet

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2SB1116 datasheet
2SB1116 price
2SB1116 data
2SB1116 ic
NEC  PNP SILICON TRANSISTORS
2SB1116, 2SB1116A
DESCR IPTION  The 2SB1 1 16/2SB1 1 16A are designed  for use in driver 
and output
stages of AF amplifier, general purpose application.  PACKAGE DIMENSIONS
in millimeters
5.2 MAX.
FEATURES  • Low Collector Saturation Voltage.
VCE(sat)  = —0.20 V TYP. (Ic  = —1.0 A, lB = —50 mA)
• High Break Down Voltage.
VCEO =—50 V/—60V (2SB1116/2SB1116A)
• High Total Power Dissipation.  :  = 0.75 W (Ta = 25 °C)
• Complementary to the NEC 2SD1616/2SD1616A NPN Transistor.
ABSOLUTE MAXIMUM  RATINGS Maximum Temperatures
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Ta  = 25 °C) Total Power Dissipation
—55to+150°C
150 C Maximum
Maximum Voltages and Currents (Ta   = 25 °C)
VCBO  Collector to Base Voltage VCEO   Collector to Emitter Voltage VEBO 
Emitter to Base Voltage
IC  Collector Current (DC)
Ic  Collector Current (pulse)*
•PW    10 ms, Duty Cycle    50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2SB1 11 6/2SB1 1 16A
—60 V/—80 V
—50V/—60V
1  2  3   r.-j
1. Emitter  EIAJ  : SC-43B
2. Collector   JEDEC : TO-92
3. Base   1EC   :  PA33
2S81 116/2SB1 1 16A
hFE1 **
CHARACTER ISTIC DC Current Gain
DC Current Gain
TYP.  MAX.  UNIT
TEST CONDITIONS VCE =      2.0 V. IC = —100 mA
VCE = —2.0 V. IC    —1.0 A
‘EBO VBE**
V CE (sat ) **
VBE(sat)
ton tstg
Gain Bandwidth  Product Output Capacitance Collector Cutoff Current 
Emitter Cutoff Current Base to Emitter Voltage
Collector Saturation Voltage
Base Saturation Voltage
Turn-On Time
Storage Time
MHz pF
—100  nA
—100  nA
—700  mV
—1.2    V Ps
VCE = —2.0 V. ‘C =  —100 mA VCB = —10 V. E =  0, f =  1.0 MHz VCB = —60 
VI—80 V. ‘E    0
VEB = —6.0 V, IC = 0
VCE = —2.0 V. Ic = —50 mA
‘c—l•O A, IB—5OmA Jc =  —1.0 A, lB = —50 mA
/VCC= —10 V, I= —100 mA
1B1=—IB2—lOmA
    tf   Fall Time
**Pulsed PW  350 ps, Duty Cycle  2 %
C  lassification of  hFE1
Rank    L    K    U Range  135to270   200to400   300to600
Test Conditions: VCE   —2.0 V, IC = —100 mA
P5  \VBE(off) =  2to3  V
   2SB1116,2SB1116A   NEC
TYPICAL CHARACTERISTICS  (Ta =  25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
JFree Airj
SAFE  OPERATING AREAS (TRANSIENT  THERMAL  RESISTANCE METHOD)
tI[1[IIt   I  I[I1
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
‘  _200  J
—60  —150 jzA
25  50  75  100  125   150
Ta—Ambient  Temperature—C
I     =—5OuA
0  —2  —4  —6  —8  —10
VCE—Collector to  Emitter  Voltage—V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
—1    —2   —5  —10—20   —50—100
VCE—Collector to Emitter Voltage—V
DC CURRENT GAIN  vs.  >
COLLECTOR CURRENT
1000     >
COLLECTOR AND  BASE SATURA­ TION  VOLTAGE vs. COLLECTOR CURRENT
VCE—2.OV
—2  11 [11111
I   -{   f[EIIfj
lC=2O•IB
I         —0.8
—3.0 mA
.E    200
VBE(sot)  .
——2.5 mA—
—2.0 mA
—1.5 mA
-1.0  mA
2-0.2   IB=—O.5 mA
LIJ   U
-0.1   till
0.05  —(-  uj,IliI
—0.01—0.02 -0.05—0.1—0.2      —0.5—1    —2
0  —0.2   —0.4  —0.6  —0.8  —1.0
—0.01—0.02  —0.05—0.1 —0.2       —0.5—1      —2       —5  —10        >>
IC—Collector  Current—A
VCE—Collector to  Emitter  Voltage—V
IC—Collector  Current—A
GAIN   BANDWIDTH  PRODUCT vs. EMITTER CURRENT
OUTPUT CAPACITANCE vs. COLLECTOR TO  BASE VOLTAGE
SWITCHING TIME  vs. COLLECTOR CURRENT
1.11000    -t     VCE—2.OV
 1  HI H1[
1=1.0 MHz  2
Vyotf)= 2 to  3 V PW2   gS
1  Duty CycIe2 %
0  Cu    0.5  tstg
0  o.1f411
‘LL   111JJ1Nl
—0.01—0.02—0.05 —0.1 —0.2         —0.5  —1     —2   —5—10
IC—Collector  Current—A
—1      —2   —5      —10    —20  —50—10
VCB—Collector  to  Base Voltage—V
—0.01 —0.02  —0.05  —0.1      —0.2   —0.5      —1
IC—Collector  Current—A

[Lothar M. (Firma: Titel) (lkmiller) (Moderator)]

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