2SB1015 datasheet utsource

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2SB1015 data
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SB1015A
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS  Unit in mm
Low Collector Saturation Voltage : V。E (sat) = —1.7 V (Max.)
(IC = 一 3A，IB = 一 0.3 A)
10 + 0.3 _ £3.2 ±0.2 2.7±0.2
Collector Power Dissipation  : Pq = 25W(Tc = 25。C)
0.75±0.15
2.54±0.25
2.54 + 0.25
COLLECTOR
EMITTER
EIAJ  SC-67
TOSHIBA 2-10R1A
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector PowerDissipation
Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature Range
-55 〜150
 961001EAA1
TOSHIBA is continually working to improve the quality and the 
reliability of its products. Nevertheless, semiconductordevices in 
general can malfunction or fail due to their inherent electrical 
sensitivity and vulnerability to physical stress.It is the 
responsibility of the buyer, when utilizing TOSHIBA products, to observe 
standards of safety, and to avoidsituations in which a malfunction or 
failure of a TOSHIBA product could cause loss of human life, bodily 
injury ordamage to property. In developing your designs, please ensure 
that TOSHIBA products are used within specifiedoperating ranges as set 
forth in the most recent products specifications. Also, please keep in 
mind the precautionsand conditions set forth in the TOSHIBA 
Semiconductor Reliability Handbook.
The information contained herein is presented only as a guide for the 
applications of our products. No responsibilityis assumed by TOSHIBA 
CORPORATION for any infringements of intellectual property or other 
rights of the thirdparties which may result from its use. No license is 
granted by implication or otherwise under any intellectualproperty or 
other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
VCB = -60 V, Ie = 0
Emitter Cut-off Current
VEB= -7V, IC = 0
Collector-EmitterBreakdown Voltage
V (BR) CEO
IC = -50 mA, Ib = 0
DC Current Gain
hFE(l)(Note)
VCE = -5V, Ic = -0.5 A
hFE (2)
VCE= -5V, IC= -3A
Collector-EmitterSaturation Voltage
VCE (sat)
IC = -3 A, IB = -0.3 A
Base-Emitter Voltage
VCE = -5 A, Ic = -0.5 A
Transition Frequency
VCE = -5V, Ic = -0.5 A
Collector Output Capacitance
VCB = -10 V，IE = 0，f = 1 MHz
SwitchingTime
Turn-on Time
NIIB2 ib1 outputTbiIL input ^^^
Vcc = -30 V
-IB1 = IB2 = 0.2 A,DUTY CYCLE ^ 1%
Storage Time
Fall Time
(Note) : hFE (l) Classification O : 60〜120，Y : 100〜200
COMMONEMITTERTc = 25°C
Ic 一 VCE
I^syHno ^OSSJOO
COLLECTOR-EMITTER VOLTAGE VqE (V)
COMMON EMITTER
Vr.F.=
hFE 一 IC
o o o o
o o o 55 3 1
a』q 之 XNaHHno
Ic 一 VBE
BASE-EMITTER VOLTAGE VRE (V)
(V) 01HM3D5D5no ば olQanoo
VCE (sat) 一 IC
-0.1 -0.3  -1  -3 -5
II I 三三 I \\\l.02
丄石ぷ 1' 5 2-0
|| lo.o
(A) lwo> aoVJ/IOA
NOIHVHnHvs
20-0.02
COLLECTOR CURRENT In (A)
COLLECTOR CURRENT In (A)
 SAFE OPERATING AREA
 Rth ⑴ 一 tw
⑴ WITHOUT HEAT SINK
(9) TNFTNTTF, HF.AT STNK
⑴ Ta = 9E°C
^9^ tv> — 9K°r,
10"3 10"2 10"1 1 10 102TIME t (s)
(V) 01HM3D5D5no ば olQanoo
(M/o。) s J
| | | | |
I I I I II-IQ MAX. (PULSED) X
'10 ms》
'100 msX〜※
I I I I I I
I I I I I I
IQ MAX. (CONTINUOUS)
DC OPERATc = 25c
i i i i i
^ SINGLE NONREPETITIVE
PULSE Tc - 25°CCURVES MUST BE DERATEDLINEARLY WITH INCREASEIN 
TEMPERATURE. \
-1  -3  -10  -30  -100
COLLECTOR-EMITTER VOLTAGE VqE (V)